(China (Mainland))
Product Summary
The JANTX2N6768 is a repetitive avalanche and dv/dt rated hexfet transistor. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability. The JANTX2N6768 also features all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. The JANTX2N6768 is well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
Parametrics
JANTX2N6768 absolute maxing ratings: (1)Continuous Drain Current: 14 A; (2)Continuous Drain Current: 9.0 A; (3)IDM Pulsed Drain Current: 56 A; (4)Max. Power Dissipation: 150 W; (5)Linear Derating Factor: 1.2 W/℃; (6)VGS Gate-to-Source Voltage: ±20 V; (7)EAS Single Pulse Avalanche Energy: 11.3 mJ; (8)IAR Avalanche Current: 14 A; (9)EAR Repetitive Avalanche Energy: 15 mJ; (10)dv/dt Peak Diode Recovery dv/dt: 4.0 V/ns; (11)TJ Operating Junction TSTG Storage Temperature Range: -55 to 150℃; (12)Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)℃.
Features
JANTX2N6768 features: (1)Repetitive Avalanche Ratings; (2)Dynamic dv/dt Rating; (3)Hermetically Sealed; (4)Simple Drive Requirements; (5)Ease of Paralleling.
Diagrams
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