(China (Mainland))
Product Summary
The 2SK1412 is an N channel MOS silicon FET. It is sutiable for high votlage high speed switching applications.
Parametrics
2SK1412 absolute maximum ratings: (1)drain to source votlage, VDSS: 1500V; (2)gate to source votlage, VGSS: ±20V; (3)drain current, DC, ID: 0.1A; pulse, IDP: 0.2A; (4)allowable power dissipation, PD: 2.0W; (5)channel temperature, Tch: 150℃; (6)storage temperature, Tstg: -55 to 150℃.
Features
2SK1412 features: (1)low on resistance, low input capacitance, very high-speed switching; (2)high reliability; (3)micaless package facilitating mounting.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 2SK1412 |
Other |
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Data Sheet |
Negotiable |
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2SK1412LS |
Other |
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Data Sheet |
Negotiable |
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