Product Summary

The 2SK4100 is an N-Channel Silicon MOSFET. It is suitable for General-Purpose Switching Device Applications.

Parametrics

2SK4100 absolute maximum ratings: (1)Drain-to-Source Voltage VDSS: 650 V; (2)Gate-to-Source Voltage VGSS: ±30 V; (3)Drain Current (DC), IDc: 6 A; IDpack: 5.6 A; (4)Drain Current (Pulse) IDP: 24 A; (5)Allowable Power Dissipation PD: 2.0 W; (6)Channel Temperature Tch: 150℃; (7)Storage Temperature Tstg: -55 to +150℃; (8)Avalanche Energy (Single Pulse) EAS: 105 mJ; (9)Avalanche Current IAV: 6A.

Features

2SK4100 features: (1)Low ON-resistance, low input capacitance, ultrahigh-speed switching; (2)Adoption of high reliability HVP process; (3)Attachment workability is good by Mica-less package; (4)Avalanche resistance guarantee.

Diagrams

2SK4100 test circuit

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