Product Summary

The BF495C is an NPN silicon planar epitaxial RF transistor.

Parametrics

BF495C absolute maximum ratings: (1)Collector Emitter Voltage, VCEO: 20 V; (2)Collector Base Voltage, VCBO: 30 V; (3)Emitter Base Voltage, VEBO: 5 V; (4)Collector Current (DC), IC: 30 mA; (5)Collector Current(peak value), ICM: 30 mA; (6)Total Power dissipation up to Tamb = 25℃, Ptot: 300 mW; (7)Operating And Storage Junction Tj, Tstg: -55 to +150℃; (8)Temperature Range Junction to ambient, Rth(j-a): 420 K/W.

Features

BF495C features: (1)Collector Cut- off Current, ICBO, VCB=20V,IE=0: 500 nA; (2)Collector Cut-off Current, ICBO, VCB=20V,IE=0, Ta =150℃: 4.0 μA; (3)EmitterCut off Current, IEBO, VEB=4V, IC=0: 500 nA; (4)Base Emitter Voltage, VBE(ON), VCE=10V,IC=1mA: 0.65 to 0.74 V.

Diagrams

BF495C block diagram

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BF495C
BF495C

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