Product Summary

The EL817S(B) is a photocoupler. It contains a infrared emitting diode optically coupled to a phototransistor. The EL817S(B) is packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option. The applications of the EL817S(B) include Computer terminals, System appliances, measuring instruments, Registers, copiers, automatic vending machines, Electric home appliances, such as fan heaters, etc, Signal transmission between circuits of different potentials and impedances.

Parametrics

EL817S(B) absolute maximum ratings: (1)Input, Forward Current, IF: 50mA; Reverse Voltage, VR: 6V; Power Dissipation, P: 70mW; (2)Output, Collector Power Dissipation, PC: 150mW; Collector Current, IC: 50mA; Collector-Emitter Voltage, VCEO: 35V; Emitter-Collector Voltage, VECO: 6V; (3)Total Power Dissipation, Ptot: 200mW; (4)Isolation Voltage, Viso: 5000V rms; (5)Operating Temperature, Topr: -55 to +110℃; (6)Storage Temperature, Tstg: -55 to +125℃; (7)Soldering Temperature, Tsol: 260℃.

Features

EL817S(B) features: (1)Current transfer ratio (CTR:MIN.50% at IF =5mA ,VCE =5V); (2)High isolation voltage between input and output (Viso=5000 V rms ); (3)Compact dual-in-line package; (4)Pb free; (5)UL approved (No. E214129); (6)VDE approved (No. 132249); (7)SEMKO approved; (8)NEMKO approved (No. P04203585, P00102385, P02101854); (9)DEMKO approved (No. 311822-01/02/03,310352-01, 311822-03A); (10)CSA approved (No. 1143601); (11)BSI approved (No. 8592, 8593).

Diagrams

EL817S(B) block diagram

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