IRF6215

IRF6215, HEXFET Power MOSFET, TO-220AB, -150V, -13A, International Rectifier

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Price:: US $0.58~0.59 / piece [Get Latest Price]

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PartNumber:: IRF6215

Brand:: International Rectifier - IR | Pack: TO | D/C: 10+

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Products Upload time: 2012-07-09

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Product Summary

The IRF6215 is a HEXFET Power MOSFET. Fifth Generation HEXFET from International Rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Parametrics

IRF6215 absolute maximum ratings: (1)ID @ TC = 25℃, Continuous Drain Current, VGS @ -10V: -13A; (2)ID @ TC = 100℃, Continuous Drain Current, VGS @ -10V: -9.0 A; (3)IDM Pulsed Drain Current: -44A; (4)PD @TC = 25℃, Power Dissipation: 110 W; (5)Linear Derating Factor: 0.71 W/℃; (6)VGS, Gate-to-Source Voltage: ±20 V; (7)EAS, Single Pulse Avalanche Energy: 310 mJ; (8)IAR, Avalanche Current: -6.6 A; (9)EAR, Repetitive Avalanche Energy: 11 mJ; (10)dv/dt, Peak Diode Recovery dv/dt: -5.0 V/ns; (11)TJ, TSTG, Operating Junction and Storage Temperature Range: -55 to + 175℃; (12)Soldering Temperature, for 10 seconds: 300 (1.6mm from case)℃; (13)Mounting torque, 6-32 or M3 screw: 10 lbf·in (1.1N·m).

Features

IRF6215 features: (1)Advanced Process Technology; (2)Dynamic dv/dt Rating; (3)175℃ Operating Temperature; (4)Fast Switching; (5)P-Channel; (6)Fully Avalanche Rated; (7)Lead-Free.