Product Summary

The MRF281Z is a RF power field effect transistor. It is a N Channel Enhancement Mode Lateral MOSFET, RF Sub–Micron MOSFET Line device. It is designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. The MRF281Z is characterized for operation Class A and Class AB at 26 volts in commercial and industrial applications.

Parametrics

MRF281Z absolute maximum ratings: (1)Drain–Source Voltage, VDSS: 65Vdc; (2)Gate–Source Voltage, VGS: ±20Vdc; (3)Total Device Dissipation, @ TC = 25℃, PD: 20Watts; (4)Total Device Dissipation, Derate above 25℃, PD: 0.115W/℃; (5)Storage Temperature Range, Tstg: –65 to +150℃; (6)Operating Junction Temperature, TJ: 200℃.

Features

MRF281Z features: (1)Specified Two–Tone Performance @ 1930 and 2000 MHz, 26 Volts; (2)Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 4 Watts CW Output Power; (3)Excellent Thermal Stability; (4)Characterized with Series Equivalent Large–Signal Impedance Parameters; (5)S–Parameter Characterization at High Bias Levels; (6)Available in Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel.

Diagrams

MRF281Z PACKAGE DIMENSIONS

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MRF281ZR1
MRF281ZR1


IC MOSFET RF N-CHAN NI-200Z

Data Sheet

0-500: $19.78
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MRF20030
MRF20030

Other


Data Sheet

Negotiable 
MRF20030R
MRF20030R

Other


Data Sheet

Negotiable 
MRF20060
MRF20060

Other


Data Sheet

Negotiable 
MRF20060_1248487
MRF20060_1248487

Other


Data Sheet

Negotiable 
MRF20060R
MRF20060R

Other


Data Sheet

Negotiable 
MRF20060RS
MRF20060RS

Other


Data Sheet

Negotiable