(China (Mainland))
Product Summary
The PSMN005-55 is an N-channel logic level TrenchMOS transistor. The device uses the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. The applications of the PSMN005-55 include D.C. to D.C. converters, switched mode power supplies.
Parametrics
PSMN005-55 absolute maximum ratings: (1)VDSS, Drain-source voltage, Tj = 25℃ to 175℃: 55 V; (2)VDGR, Drain-gate voltage Tj = 25℃ to 175℃; RGS = 20 kW: 55 V; (3)VGS, Continuous gate-source: ±15 V; (4)voltage; (5)VGSM, Peak pulsed gate-source Tj ≤ 150℃: ±20 V; (6)voltage; (7)ID, Continuous drain current Tmb = 25℃; VGS = 5 V: 752 A; Tmb = 100℃; VGS = 5 V: 752 A; (8)IDM, Pulsed drain current Tmb = 25℃: 240 A; (9)PD, Total power dissipation Tmb = 25℃: 230 W; (10)Tj, Tstg, Operating junction and storage temperature: -55 to 175℃.
Features
PSMN005-55 features: (1)Trench technology; (2)Very low on-state resistance; (3)Fast switching; (4)Low thermal resistance.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 PSMN005-55B |
Other |
|
Data Sheet |
Negotiable |
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 |
PSMN005-55B /T3 |
NXP Semiconductors |
MOSFET TAPE13 PWR-MOS |
Data Sheet |
Negotiable |
|
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|
PSMN005-55P,127 |
NXP Semiconductors |
MOSFET RAIL PWR-MOS |
Data Sheet |
Negotiable |
|
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|
PSMN005-55B,118 |
NXP Semiconductors |
MOSFET TAPE13 PWR-MOS |
Data Sheet |
Negotiable |
|
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|
PSMN005-55P |
NXP Semiconductors |
MOSFET RAIL PWR-MOS |
Data Sheet |
Negotiable |
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